Our services include the following:

Wafer Distribution Layer (CuNiAu RDL & Cu RDL)
Copper Pillar Bump (CuP Bump)
Lead-Free Bump (LF Bump)
Wafer-level Chip Scale Package (WLCSP)
Application: Cellphones, TVs, printers, monitors, appliances, digit cards, set-top-boxes, bio-chips, and Testing wafers.
Front Side Metallization (FSM)
Backside Grinding and Backside Metallization (BGBM)
Application: Power discreet components such MOSFET and IGBT.

SEMINC Silicon Nitride Plates(Si3N4)
Using ultra-pure silicon nitride powder as raw material, combined with unique sintering technology, it can perfectly exert the characteristics of the material. Physical properties such as bending strength, thermal conductivity, CTE and breakdown voltage can reach theoretical values. (Product Specifications for details)


High Strength: Enabling thinner & lighter components. Improving heat dissipation efficiency.
High Thermal Conductivity: Extended service life and improved energy efficiency.
Low CTE: Matched with silicon (Si) and silicon carbide (SiC), it’s the most reliable choice.
High Breakdown Voltage: The performance of insulation is good, and no risk of leakage in high-power use.